2004 Jan 14 3
NXP Semiconductors
Product data sheet
High-speed double diode BAV74
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS
Tj
=
25
°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BAV74
?
plastic surface mounted package; 3 leads
SOT23
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see
Fig.3
IF
=
1
mA
715
mV
IF
=
10
mA
855
mV
IF
=
100
mA
1.0
V
IR
reverse current
see
Fig.5
VR
=
25
V
30
nA
VR
=
50
V
0.1
μA
VR
=
25
V; Tj
=
150
°C
30
μA
VR
=
50
V; Tj
=
150
°C
100
μA
Cd
diode capacitance
f
=
1
MHz; VR
=
0; see
Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF
=
10
mA to
IR
=
10
mA; RL
=
100
?; measured
at IR
=
1
mA; see
Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF
=
10
mA;
tr
=
20
ns; see
Fig.8
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-tp)
thermal resistance from junction to tie-point
360
K/W
Rth(j-a)
thermal resistance from
junction to ambient
note
1
500
K/W
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